Gallium nitride (GaN) in EV electronics
Where GaN fits today, and why it is not (yet) the traction inverter material.
You'll learn
- Explain gallium nitride (gan) in ev electronics at engineering level
- Read the numbers that define the behaviour
- Apply the idea to a real drive system
Overview
GaN is another wide-bandgap semiconductor, but with a different set of trade-offs to silicon carbide, which is why it has found a home in chargers and DC/DC converters rather than the main traction inverter.
In depth
SiC
GaN
SiC vs. GaN for automotive power
- 650 V–1,700 VTypical voltage ratingUsually below 650 V
- FastSwitching speedExtremely fast
- HighCurrent handling per die areaLower at same voltage
- Traction inverterBest automotive fitOBC, DC/DC, auxiliary power
GaN's extremely fast switching lets designers push carrier frequencies far higher, shrinking magnetics and capacitors dramatically — valuable in the on-board charger and DC/DC converter, where size and weight matter and voltages are lower. At traction-inverter voltages and currents, silicon carbide currently offers a better balance of robustness and cost.
Key takeaways
Remember this
- GaN switches extremely fast but is typically limited to lower voltage and current than SiC.
- GaN's strength is shrinking magnetics in chargers and DC/DC converters.
- SiC remains the dominant choice for traction inverters as of today's technology.
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